| NO. |
Publication |
| 10 |
Jeon, C.B., Kong, S., Shin, H., Ahn, J., and Kim, J., Characteristics of Zirconium Based Amorphous Thin Films Deposited by Co-Sputtering, Integrated Ferroelectrics,48, 33 40, (2002) |
| 9 |
Park, J., Choi, B., Park, N., Shin, H., Lee, J.G., and Kim, J., Characteristics of ZrO2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Applications, Integrated Ferroelectrics, 48, 23 32, (2002) |
| 8 |
Hong, J., Song, H.W., Hong, S., Shin, H., and No, K., Fabrication and Investigation of ultrathin, and smooth Pb(Zr,Ti)O3 films for miniaturization of microelectronic devices, J. Appl. Phys.,92, [12], 7434-7441, (2002) |
| 7 |
Hong, S.J., Yang, H.J., Kim, J.Y., Shin, H., Lee, J.H., Ko, Y.K., Lee, J.G., Kang, B.J., Cho, B.S., Jeong, C.O., and Chung, K.H., Effects of Co Precipitation on Si Diffusion in Ag(Co)/Si During Postannealing, J. Kor. Phys. Soc.,41, Oct., 417 421, (2002) |
| 6 |
Song, H.W., Shin, H., and No, K., The Dedpendence of the Prefered Orientation and Piezoelectric Property of Pb(Zr0.52,Ti0.48)O3 (PZT) Thin Film on the Deposition Temperature Ferroelectrics, 271, 27-32,(2002) |
| 5 |
Hong, J., Song, H.W., Hong, S., Shin, H., and No, K., Fabrication and characterization of Pb(Zr,Ti)O3 (PZT) Ultra-thin Films below 100nm, Ferroelectrics,271, 57-62,(2002) |
| 4 |
Woo, J., Hong, S., Min, D., Shin, H., and No, K., : Effect of domain structure on thermal stability of nanoscale ferroelectric domains, Appl. Phys. Lett, 80, 4000-02, (2002) |
| 3 |
Shin, H., Hong, S., Moon, J., and Jeon, J.U.,: Read/Write Mechanisms and Data Storage System using Atomic Force Microscopy and MEMS Technology, Ultramicroscopy, 91, 103-110(2002) |
| 2 |
Hong, S., Shin, H., Woo, J., and No, K.,: Effect of Cantilever-Sample Interaction on Piezoelectric Force Microscopy, Appl. Phys. Lett., 80, 1453-1455, (2002) |
| 1 |
Shin, J., Shin, H., and Jeon, J.U., Characterization of Local Piezoelectric Behavior of Ferroelectric PbZrxTi1-xO3 Thin Films for Application of Ultra-high Density Storage Devices, J. Kor. Phys. Soc., 40 [1], 145-47, (2002) |
